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Proceedings Paper

Mechanisms of EUV exposure: electrons and holes
Author(s): Amrit Narasimhan; Steven Grzeskowiak; Christian Ackerman; Tracy Flynn; Greg Denbeaux; Robert L. Brainard
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Paper Abstract

In extreme ultraviolet (EUV) lithography, 92 eV photons are used to expose photoresists. Current EUV photoresists are composed of photoacid generators (PAGs) in polymer matrices. Secondary electrons (2 - 80 eV) created in resists during EUV exposure play large role in acid-production. There are several proposed mechanisms for electron-resist interactions: internal excitation, electron trapping, and hole-initiated chemistry.

Here, we will address two central questions in EUV resist research: (1) How many electrons are generated per EUV photon absorption? (2) By which mechanisms do these electrons interact and react with molecules in the resist? We will use this framework to evaluate the contributions of electron trapping and hole initiated chemistry to acid production in chemically amplified photoresists, with specific emphasis on the interdependence of these mechanisms. We will show measurements of acid yield from direct bulk electrolysis of PAGs and EUV exposures of PAGs in phenolic and nonphenolic polymers to narrow down the mechanistic possibilities in chemically amplified resists.

Paper Details

Date Published: 27 March 2017
PDF: 9 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430W (27 March 2017); doi: 10.1117/12.2258321
Show Author Affiliations
Amrit Narasimhan, SUNY Polytechnic Institute (United States)
Steven Grzeskowiak, SUNY Polytechnic Institute (United States)
Christian Ackerman, SUNY Polytechnic Institute (United States)
Tracy Flynn, SUNY Polytechnic Institute (United States)
Greg Denbeaux, SUNY Polytechnic Institute (United States)
Robert L. Brainard, SUNY Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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