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Proceedings Paper

Advanced development techniques for metal-based EUV resists
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Paper Abstract

Pure thin-films of unimolecular organometallic photoresists were lithographically evaluated using extreme ultraviolet light (EUV, λ = 13.5 nm) and developed using solutions containing carboxylic acids. Optimization of development solutions used with a cobalt-oxalate EUV resist (NP1, 2) led to a switch in lithographic tone from negative to positive. Additional optimization led to an improvement in top loss (35 to 7%) with development in cyclohexanone and 2-butanone, respectively. We saw a drastic improvement in photo-speed (Emax = 5 mJ/cm2) and contrast of the negative-tone imaging with development in certain acidic solutions. Additionally, carboxylic acid solutions provide excellent development conditions for resists that we, in the past, have been unable to successfully develop.

Paper Details

Date Published: 31 March 2017
PDF: 12 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014309 (31 March 2017); doi: 10.1117/12.2258126
Show Author Affiliations
Jodi Hotalen, SUNY Polytechnic Institute (United States)
Michael Murphy, SUNY Polytechnic Institute (United States)
William Earley, SUNY Polytechnic Institute (United States)
Michaela Vockenhuber, Paul Scherrer Institut (Switzerland)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Daniel A. Freedman, State Univ. of New York at New Paltz (United States)
Robert L. Brainard, SUNY Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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