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Proceedings Paper

Enhanced methodology of focus control and monitoring on scanner tool
Author(s): Yen-Jen Chen; Young Ki Kim; Xueli Hao; Juan-Manuel Gomez; Ye Tian; Ferhad Kamalizadeh; Justin K. Hanson
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Paper Abstract

As the demand of the technology node shrinks from 14nm to 7nm, the reliability of tool monitoring techniques in advanced semiconductor fabs to achieve high yield and quality becomes more critical. Tool health monitoring methods involve periodic sampling of moderately processed test wafers to detect for particles, defects, and tool stability in order to ensure proper tool health. For lithography TWINSCAN scanner tools, the requirements for overlay stability and focus control are very strict. Current scanner tool health monitoring methods include running BaseLiner to ensure proper tool stability on a periodic basis. The focus measurement on YIELDSTAR by real-time or library-based reconstruction of critical dimensions (CD) and side wall angle (SWA) has been demonstrated as an accurate metrology input to the control loop. The high accuracy and repeatability of the YIELDSTAR focus measurement provides a common reference of scanner setup and user process. In order to further improve the metrology and matching performance, Diffraction Based Focus (DBF) metrology enabling accurate, fast, and non-destructive focus acquisition, has been successfully utilized for focus monitoring/control of TWINSCAN NXT immersion scanners. The optimal DBF target was determined to have minimized dose crosstalk, dynamic precision, set-get residual, and lens aberration sensitivity. By exploiting this new measurement target design, ~80% improvement in tool-to-tool matching, >16% improvement in run-to-run mean focus stability, and >32% improvement in focus uniformity have been demonstrated compared to the previous BaseLiner methodology. Matching <2.4 nm across multiple NXT immersion scanners has been achieved with the new methodology of set baseline reference. This baseline technique, with either conventional BaseLiner low numerical aperture (NA=1.20) mode or advanced illumination high NA mode (NA=1.35), has also been evaluated to have consistent performance. This enhanced methodology of focus control and monitoring on multiple illumination conditions, opens an avenue to significantly reduce Focus-Exposure Matrix (FEM) wafer exposure for new product/layer best focus (BF) setup.

Paper Details

Date Published: 28 March 2017
PDF: 9 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101452K (28 March 2017); doi: 10.1117/12.2258125
Show Author Affiliations
Yen-Jen Chen, GLOBALFOUNDRIES Inc. (United States)
Young Ki Kim, GLOBALFOUNDRIES Inc. (United States)
Xueli Hao, GLOBALFOUNDRIES Inc. (United States)
Juan-Manuel Gomez, GLOBALFOUNDRIES Inc. (United States)
Ye Tian, ASML US, Inc. (United States)
Ferhad Kamalizadeh, ASML US, Inc. (United States)
Justin K. Hanson, ASML US, Inc. (United States)

Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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