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Proceedings Paper

Antimony photoresists for EUV lithography: mechanistic studies
Author(s): Michael Murphy; Amrit Narasimhan; Steven Grzeskowiak; Jacob Sitterly; Philip Schuler; Jeff Richards; Greg Denbeaux; Robert L. Brainard
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Paper Abstract

We have developed a method to study the photomechanism of our antimony carboxylate platform R3Sb(COOR')2. A series of mechanistic studies followed the production of reaction byproducts by mass spectrometer, as they left the film during exposure to EUV photons and 80 eV electrons. We identified several prominent outgassing fragments and their rates of production as a function of ligand structure. The degree of outgassing appears to be well-correlated with the bond dissociation energy of the carboxylate ligand R’ group. Furthermore, a deuterium labeling study was conducted to determine from which ligand hydrogen is abstracted to form benzene and phenol during exposure. Benzene and phenol were found to abstract hydrogen from opposing sites within the film, and with greater than 95% isotopic purity. Using the results of the outgassing studies alongside established mechanisms for electron-induced reactions; a series of reaction pathways were proposed to generate the aforementioned outgassing species and a possible nonvolatile negative-tone photoproduct.

Paper Details

Date Published: 31 March 2017
PDF: 12 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014307 (31 March 2017);
Show Author Affiliations
Michael Murphy, SUNY Polytechnic Institute (United States)
Amrit Narasimhan, SUNY Polytechnic Institute (United States)
Steven Grzeskowiak, SUNY Polytechnic Institute (United States)
Jacob Sitterly, SUNY Polytechnic Institute (United States)
Philip Schuler, SUNY Polytechnic Institute (United States)
Jeff Richards, SUNY Polytechnic Institute (United States)
Greg Denbeaux, SUNY Polytechnic Institute (United States)
Robert L. Brainard, SUNY Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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