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Proceedings Paper

Study for new hardmask process scheme
Author(s): Daeyoup Lee; Phillip Tatti; Richard Lee; Jack Chang; Winston Cho; Sanggil Bae
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Paper Abstract

Hardmask processes are a key technique to enable low-k semiconductors, but they can have an impact on patterning control, influencing defectivity, alignment, and overlay. Specifically, amorphous carbon layer (ACL) hardmask schemes can negatively affect overlay by creating distorted alignment signals. A new scheme needs to be developed that can be inserted where amorphous carbon is used but provide better alignment performance. Typical spin-on carbon (SOC) materials used in other hardmask schemes have issues with DCD-FCD skew. In this paper we will evaluate new spin-on carbon material with a higher carbon content that could be a candidate to replace amorphous carbon.

Paper Details

Date Published: 27 March 2017
PDF: 5 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461L (27 March 2017); doi: 10.1117/12.2258099
Show Author Affiliations
Daeyoup Lee, GLOBALFOUNDRIES Inc. (United States)
Phillip Tatti, GLOBALFOUNDRIES Inc. (United States)
Richard Lee, GLOBALFOUNDRIES Inc. (United States)
Jack Chang, GLOBALFOUNDRIES Inc. (United States)
Winston Cho, GLOBALFOUNDRIES Inc. (United States)
Sanggil Bae, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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