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Proceedings Paper

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography
Author(s): Carmen Popescu; Andreas Frommhold; Alexandra McClelland; John Roth; Yasin Ekinci; Alex P. G. Robinson
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Paper Abstract

Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.

Paper Details

Date Published: 24 March 2017
PDF: 9 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430V (24 March 2017); doi: 10.1117/12.2258098
Show Author Affiliations
Carmen Popescu, The Univ. of Birmingham (United Kingdom)
Andreas Frommhold, The Univ. of Birmingham (United Kingdom)
Alexandra McClelland, Irresistible Materials Ltd. (United Kingdom)
John Roth, Nano-C, Inc. (United States)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Alex P. G. Robinson, The Univ. of Birmingham (United Kingdom)
Irresistible Materials Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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