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Proceedings Paper

Background pressure effects on EUV source efficiency and produced debris characteristics
Author(s): Tatyana Sizyuk
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Paper Abstract

The cost of future computer chips, among other things, will depend on the performance of EUV sources and on the duration of the efficient operation and lifetime of nanolithography devices. While the efficiency of the sources is continuously being improved, their operational cycle is still highly restricted due to optical mirrors degradation as well as necessity of cleaning chamber environment and components.

One of the potential problems of EUV sources for high volume manufacture (HVM) regimes can be related to the contamination of chamber environment by products of preceding laser pulse/droplet interactions. Implementation of high, 100 kHz and higher, repetition rate of devices for Sn droplets and laser pulses generation can cause high accumulation of tin in the chamber in the form of vapor/clusters.

Possible tin accumulation in the chamber in dependence on laser parameters and mitigation system efficiency was evaluated. Then, the effects of various pressures of tin vapor on the CO2 and Nd:YAG laser beams propagation and on the size, the intensity, and the efficiency of EUV sources produced were studied.

Paper Details

Date Published: 27 March 2017
PDF: 6 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101432J (27 March 2017); doi: 10.1117/12.2258089
Show Author Affiliations
Tatyana Sizyuk, Purdue Univ. (United States)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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