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Proceedings Paper

Framework for SEM contour analysis
Author(s): L. Schneider; V. Farys; E. Serret; C. Fenouillet-Beranger
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Paper Abstract

SEM images provide valuable information about patterning capability. Geometrical properties such as Critical Dimension (CD) can be extracted from them and are used to calibrate OPC models, thus making OPC more robust and reliable. However, there is currently a shortage of appropriate metrology tools to inspect complex two-dimensional patterns in the same way as one would work with simple one-dimensional patterns. In this article we present a full framework for the analysis of SEM images. It has been proven to be fast, reliable and robust for every type of structure, and particularly for two-dimensional structures. To achieve this result, several innovative solutions have been developed and will be presented in the following pages. Firstly, we will present a new noise filter which is used to reduce noise on SEM images, followed by an efficient topography identifier, and finally we will describe the use of a topological skeleton as a measurement tool that can extend CD measurements on all kinds of patterns.

Paper Details

Date Published: 28 March 2017
PDF: 13 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014513 (28 March 2017); doi: 10.1117/12.2258059
Show Author Affiliations
L. Schneider, STMicroelectronics (France)
CEA-LETI (France)
V. Farys, STMicroelectronics (France)
E. Serret, STMicroelectronics (France)
C. Fenouillet-Beranger, CEA-LETI (France)

Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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