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Proceedings Paper

Design technology co-optimization (DTCO) study on self-aligned-via (SAV) with Lamella DSA for sub-7 nm technology
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Paper Abstract

In this paper, we present a design technology co-optimization (DTCO) flow to pattern self-aligned via (SAV) using two masks with grapho-epitaxy of lamella BCP and 193i for sub-7nm design. We show that it is necessary to consider both metal and via layers at the same time in creating design rules with process variations. Due to lamella DSA’s own characteristics, it can be easily applied in dense memory or SRAM applications for SAV patterning using traditional single-material metal hard mask. However, to achieve two-mask SAV solution for logic applications, we need to apply alternating hard mask in metal to cut lamella DSA patterns without compromising the technology scaling.

Paper Details

Date Published: 30 March 2017
PDF: 12 pages
Proc. SPIE 10148, Design-Process-Technology Co-optimization for Manufacturability XI, 101480B (30 March 2017); doi: 10.1117/12.2258056
Show Author Affiliations
Yuansheng Ma, Mentor Graphics Corp. (United States)
Jongwook Kye, GLOBALFOUNDRIES Inc. (United States)
Gurdaman S. Khaira, Mentor Graphics Corp. (United States)
Le Hong, Mentor Graphics Corp. (United States)
James Word, Mentor Graphics Corp. (United States)
Yuyang Sun, Mentor Graphics Corp. (United States)
Joydeep Mitra, Mentor Graphics Corp. (United States)
J. Andres Torres, Mentor Graphics Corp. (United States)
Germain Fenger, Mentor Graphics Corp. (United States)
Harry J. Levinson, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 10148:
Design-Process-Technology Co-optimization for Manufacturability XI
Luigi Capodieci; Jason P. Cain, Editor(s)

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