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Proceedings Paper

Photo-electronic current transport in back-gated graphene transistor
Author(s): Ashok Srivastava; Xinlu Chen; Aswini K. Pradhan
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Paper Abstract

In this work, we have studied photo-electronic current transport in a back-gated graphene field-effect transistor. Under the light illumination, band bending at the metal/graphene interface develops a built-in potential which generates photonic current at varying back-gate biases. A typical MOSFET type back-gated transistor structure uses a monolayer graphene as the channel layer formed over the silicon dioxide/silicon substrate. It is shown that the photo-electronic current consists of current contributions from photovoltaic, photo-thermoelectric and photo-bolometric effects. A maximum external responsivity close to 0.0009A/W is achieved at 30μW laser power source and 633nm wavelength.

Paper Details

Date Published: 17 April 2017
PDF: 11 pages
Proc. SPIE 10167, Nanosensors, Biosensors, Info-Tech Sensors and 3D Systems 2017, 101671H (17 April 2017); doi: 10.1117/12.2258051
Show Author Affiliations
Ashok Srivastava, Louisiana State Univ. (United States)
Xinlu Chen, Norfolk State Univ. (United States)
Aswini K. Pradhan, Norfolk State Univ. (United States)

Published in SPIE Proceedings Vol. 10167:
Nanosensors, Biosensors, Info-Tech Sensors and 3D Systems 2017
Vijay K. Varadan, Editor(s)

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