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Proceedings Paper

Computational overlay metrology with adaptive data analytics
Author(s): Emil Schmitt-Weaver; Venky Subramony; Zakir Ullah; Masazumi Matsunobu; Ravin Somasundaram; Joel Thomas; Linmiao Zhang; Klaus Thul; Kaustuve Bhattacharyya; Ronald Goossens; Cees Lambregts; Wim Tel; Chris de Ruiter
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Paper Abstract

With photolithography as the fundamental patterning step in the modern nanofabrication process, every wafer within a semiconductor fab will pass through a lithographic apparatus multiple times. With more than 20,000 sensors producing more than 700GB of data per day across multiple subsystems, the combination of a light source and lithographic apparatus provide a massive amount of information for data analytics. This paper outlines how data analysis tools and techniques that extend insight into data that traditionally had been considered unmanageably large, known as adaptive analytics, can be used to show how data collected before the wafer is exposed can be used to detect small process dependent wafer-towafer changes in overlay.

Paper Details

Date Published: 28 March 2017
PDF: 7 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450V (28 March 2017); doi: 10.1117/12.2258039
Show Author Affiliations
Emil Schmitt-Weaver, ASML Netherlands B.V. (Netherlands)
Venky Subramony, Micron Technology, Inc. (United States)
Zakir Ullah, Micron Technology, Inc. (United States)
Masazumi Matsunobu, Micron Technology, Inc. (United States)
Ravin Somasundaram, Micron Technology, Inc. (United States)
Joel Thomas, Micron Technology, Inc. (United States)
Linmiao Zhang, Micron Technology, Inc. (United States)
Klaus Thul, Micron Technology, Inc. (United States)
Kaustuve Bhattacharyya, ASML Netherlands B.V. (Netherlands)
Ronald Goossens, ASML Netherlands B.V. (Netherlands)
Cees Lambregts, ASML Netherlands B.V. (Netherlands)
Wim Tel, ASML Netherlands B.V. (Netherlands)
Chris de Ruiter, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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