The main challenge in ArF lithography is to reduce cost of ownership (CoO) because increase in multi-patterning process is generally required to obtain a fine pattern. As a consequence, industry strongly requires ArF lithography process with a fast scan speed scanner and low defectivity material for CoO. The breakthrough technology to improve defectivity and resolution simultaneously was the polarity-change property of film surface from hydrophobic to hydrophilic after alkaline development process because a property after development process should be only associated with defectivity, not fast scan speed. The materials with high polarity change function were explored to EUV process to achieve low defectivity with good lithography performances.

Date Published: 27 March 2017
PDF: 8 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460E (27 March 2017); doi: 10.1117/12.2257956

Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)