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Proceedings Paper

Technology for defectivity improvement in resist coating and developing process in EUV lithography process
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Paper Abstract

Extreme ultraviolet lithography (EUVL) technology is getting closer to high volume manufacturing phase every year. In order to enhance the yield in EUV lithography process, further improvement of defectivity is required at the moment. In this paper, optimized rinse and new dispense system (NDS) have been applied to a 24nm contact hole (CH) pattern in order to achieve defect reduction. As a result, the optimized rinse reduced approximately 70 % of residue defects. In addition, NDS for coating process exhibited 80 % defect reduction in particles in the coating films of material such as SOC, SOG, and resist.

Paper Details

Date Published: 27 March 2017
PDF: 5 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014326 (27 March 2017); doi: 10.1117/12.2257931
Show Author Affiliations
Yuya Kamei, Tokyo Electron Kyushu Ltd. (Japan)
Takahiro Shiozawa, Tokyo Electron Kyushu Ltd. (Japan)
Shinichiro Kawakami, Tokyo Electron Kyushu Ltd. (Japan)
Hideo Shite, Tokyo Electron Kyushu Ltd. (Japan)
Hiroshi Ichinomiya, Tokyo Electron Kyushu Ltd. (Japan)
Masashi Enomoto, Tokyo Electron Kyushu Ltd. (Japan)
Kathleen Nafus, Tokyo Electron Kyushu Ltd. (Japan)
Marc Demand, Tokyo Electron Europe Ltd. at IMEC (Belgium)
Philippe Foubert, IMEC (Belgium)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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