Share Email Print
cover

Proceedings Paper

Plasma processing of III-V materials for energy efficient electronics applications
Author(s): Iain Thayne; Xu Li; David Millar; Yen-Chun Fu; Uthayasankararan Peralagu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors. Atomic layer etching suitable for controllable recess etching in GaN power transistors will be discussed. In addition, plasma based surface passivation techniques will be reviewed for a variety of compound semiconductor materials ((100) and (110) oriented InGaAs and InGaSb).

Paper Details

Date Published: 21 March 2017
PDF: 9 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490R (21 March 2017); doi: 10.1117/12.2257863
Show Author Affiliations
Iain Thayne, Univ. of Glasgow (United Kingdom)
Xu Li, Univ. of Glasgow (United Kingdom)
David Millar, Univ. of Glasgow (United Kingdom)
Yen-Chun Fu, Univ. of Glasgow (United Kingdom)
Uthayasankararan Peralagu, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray