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Proceedings Paper

Plasma processing of III-V materials for energy efficient electronics applications
Author(s): Iain Thayne; Xu Li; David Millar; Yen-Chun Fu; Uthayasankararan Peralagu
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Paper Abstract

This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors. Atomic layer etching suitable for controllable recess etching in GaN power transistors will be discussed. In addition, plasma based surface passivation techniques will be reviewed for a variety of compound semiconductor materials ((100) and (110) oriented InGaAs and InGaSb).

Paper Details

Date Published: 21 March 2017
PDF: 9 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490R (21 March 2017); doi: 10.1117/12.2257863
Show Author Affiliations
Iain Thayne, Univ. of Glasgow (United Kingdom)
Xu Li, Univ. of Glasgow (United Kingdom)
David Millar, Univ. of Glasgow (United Kingdom)
Yen-Chun Fu, Univ. of Glasgow (United Kingdom)
Uthayasankararan Peralagu, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)

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