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Proceedings Paper

SEM imaging capability for advanced nano-structures and its application to metrology
Author(s): Makoto Suzuki; Uki Ikeda; Yuji Kasai; Yuzuru Mizuhara; Takanori Kishimoto; Ichiro Tachibana; Naomasa Suzuki; Hajime Kawano
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Paper Abstract

In recent trend of semiconductor manufacturing, accurate critical dimension (CD) metrology is required to realize miniaturized three-dimensional (3D) structures. However, the conventional edge contrast of scanning electron microscopy (SEM) is often suppressed when imaging the deep bottom of the 3D structures. In this paper, we propose effective approaches realizing the improved SEM image contrast for such metrology targets. Our approach utilizes the principle of the SEM contrast, and optimizes the three major influencing factors of SEM contrast; signal generation, signal propagation inside the specimen, and signal detection by the detectors. We show the examples of improved image contrast including, embedded voids imaging by high landing beam energy, contact-hole bottom imaging by angular selective detections, and precise edge position extraction realized by energy-angular selective imaging.

Paper Details

Date Published: 28 March 2017
PDF: 9 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451L (28 March 2017); doi: 10.1117/12.2257793
Show Author Affiliations
Makoto Suzuki, Hitachi High-Tech Science Corp. (Japan)
Uki Ikeda, Hitachi High-Tech Science Corp. (Japan)
Yuji Kasai, Hitachi High-Tech Science Corp. (Japan)
Yuzuru Mizuhara, Hitachi High-Tech Science Corp. (Japan)
Takanori Kishimoto, Hitachi High-Tech Science Corp. (Japan)
Ichiro Tachibana, Hitachi High-Tech Science Corp. (Japan)
Naomasa Suzuki, Hitachi High-Tech Science Corp. (Japan)
Hajime Kawano, Hitachi High-Tech Science Corp. (Japan)

Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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