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Proceedings Paper

LPP-EUV light source for HVM lithography
Author(s): T. Saito; Y. Ueno; T. Yabu; A. Kurosawa; S. Nagai; T. Yanagida; T. Hori; Y. Kawasuji; T. Abe; T. Kodama; H. Nakarai; T. Yamazaki; H. Mizoguchi
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Paper Abstract

We have been developing a laser produced plasma extremely ultra violet (LPP-EUV) light source for a high volume manufacturing (HVM) semiconductor lithography. It has several unique technologies such as the high power short pulse carbon dioxide (CO2) laser, the short wavelength solid-state pre-pulse laser and the debris mitigation technology with the magnetic field. This paper presents the key technologies for a high power LPP-EUV light source. We also show the latest performance data which is 188W EUV power at intermediate focus (IF) point with 3.7% conversion efficiency (CE) at 100 kHz.

Paper Details

Date Published: 13 January 2017
PDF: 5 pages
Proc. SPIE 10254, XXI International Symposium on High Power Laser Systems and Applications 2016, 102541A (13 January 2017); doi: 10.1117/12.2257464
Show Author Affiliations
T. Saito, Gigaphoton Inc. (Japan)
Y. Ueno, Gigaphoton Inc. (Japan)
T. Yabu, Gigaphoton Inc. (Japan)
A. Kurosawa, Gigaphoton Inc. (Japan)
S. Nagai, Gigaphoton Inc. (Japan)
T. Yanagida, Gigaphoton Inc. (Japan)
T. Hori, Gigaphoton Inc. (Japan)
Y. Kawasuji, Gigaphoton Inc. (Japan)
T. Abe, Gigaphoton Inc. (Japan)
T. Kodama, Gigaphoton Inc. (Japan)
H. Nakarai, Gigaphoton Inc. (Japan)
T. Yamazaki, Gigaphoton Inc. (Japan)
H. Mizoguchi, Gigaphoton Inc. (Japan)

Published in SPIE Proceedings Vol. 10254:
XXI International Symposium on High Power Laser Systems and Applications 2016
Dieter Schuoecker; Richard Majer; Julia Brunnbauer, Editor(s)

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