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Proceedings Paper

Hybrid vertical-cavity laser integration on silicon
Author(s): Emanuel P. Haglund; Sulakshna Kumari; Johan S. Gustavsson; Erik Haglund; Gunther Roelkens; Roel G. Baets; Anders Larsson
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Paper Abstract

The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.

Paper Details

Date Published: 25 February 2017
PDF: 8 pages
Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 101220H (25 February 2017); doi: 10.1117/12.2256983
Show Author Affiliations
Emanuel P. Haglund, Chalmers Univ. of Technology (Sweden)
Sulakshna Kumari, Ghent Univ.-IMEC (Belgium)
Ghent Univ. (Belgium)
Johan S. Gustavsson, Chalmers Univ. of Technology (Sweden)
Erik Haglund, Chalmers Univ. of Technology (Sweden)
Gunther Roelkens, Ghent Univ.-IMEC (Belgium)
Ghent Univ. (Belgium)
Roel G. Baets, Ghent Univ.-IMEC (Belgium)
Ghent Univ. (Belgium)
Anders Larsson, Chalmers Univ. of Technology (Sweden)

Published in SPIE Proceedings Vol. 10122:
Vertical-Cavity Surface-Emitting Lasers XXI
Kent D. Choquette; Chun Lei, Editor(s)

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