Share Email Print

Proceedings Paper

Monolithic photonic integration technology platform and devices at wavelengths beyond 2µm for gas spectroscopy applications
Author(s): S. Latkowski; P. J. van Veldhoven; A. Hänsel; D. D’Agostino; H. Rabbani-Haghighi; B. Docter; N. Bhattacharya; P. J. A. Thijs; H. P. M. M. Ambrosius; M. K. Smit; K. A. Williams; E. A. J. M. Bente
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.

Paper Details

Date Published: 16 February 2017
PDF: 7 pages
Proc. SPIE 10106, Integrated Optics: Devices, Materials, and Technologies XXI, 101060Q (16 February 2017); doi: 10.1117/12.2256604
Show Author Affiliations
S. Latkowski, Eindhoven Univ. of Technology (Netherlands)
P. J. van Veldhoven, Eindhoven Univ. of Technology (Netherlands)
A. Hänsel, Technische Univ. Delft (Netherlands)
D. D’Agostino, Eindhoven Univ. of Technology (Netherlands)
H. Rabbani-Haghighi, Eindhoven Univ. of Technology (Netherlands)
B. Docter, EFFECT Photonics B.V. (Netherlands)
N. Bhattacharya, Technische Univ. Delft (Netherlands)
P. J. A. Thijs, Eindhoven Univ. of Technology (Netherlands)
H. P. M. M. Ambrosius, Eindhoven Univ. of Technology (Netherlands)
M. K. Smit, Eindhoven Univ. of Technology (Netherlands)
K. A. Williams, Eindhoven Univ. of Technology (Netherlands)
E. A. J. M. Bente, Eindhoven Univ. of Technology (Netherlands)

Published in SPIE Proceedings Vol. 10106:
Integrated Optics: Devices, Materials, and Technologies XXI
Sonia M. García-Blanco; Gualtiero Nunzi Conti, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?