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Proceedings Paper

InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths
Author(s): Kei May Lau; Bei Shi; Yating Wan; Alan Y. Liu; Qiang Li; Si Zhu; Arthur C. Gossard; John E. Bowers; Evelyn L. Hu
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Paper Abstract

Continuous-wave optically-pumped micro-disk lasers epitaxially grown on silicon with single mode lasing at communication wavelengths from liquid helium to room temperature is reported. Growth of the InAs quantum dots (QDs) gain medium was carried out on high crystalline quality GaAs/InP-on-silicon templates. Special defect filtering techniques have been employed to minimize the impact of the highly lattice-mismatched heteroepitaxial growth on (001) silicon substrates. Compared with quantum wells, the multi-stack InAs QDs are less sensitive to residual defects originated from the hetero-interfaces. Using QDs in a micro-disk resonant cavity with minimized non-radiative surface recombination leads to low-threshold lasing in the micro-disks with a few microns in diameter.

Paper Details

Date Published: 20 February 2017
PDF: 6 pages
Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230J (20 February 2017); doi: 10.1117/12.2256481
Show Author Affiliations
Kei May Lau, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Bei Shi, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Yating Wan, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Alan Y. Liu, Univ. of California, Santa Barbara (United States)
Qiang Li, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Si Zhu, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Arthur C. Gossard, Univ. of California, Santa Barbara (United States)
John E. Bowers, Univ. of California, Santa Barbara (United States)
Evelyn L. Hu, Harvard Univ. (United States)


Published in SPIE Proceedings Vol. 10123:
Novel In-Plane Semiconductor Lasers XVI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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