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Proceedings Paper

Oxide-based materials by atomic layer deposition
Author(s): Marek Godlewski; Rafał Pietruszka; Jarosław Kaszewski; Bartłomiej S. Witkowski; Sylwia Gierałtowska; Łukasz Wachnicki; Michał M. Godlewski; Anna Slonska; Zdzisław Gajewski
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Paper Abstract

Thin films of wide band-gap oxides grown by Atomic Layer Deposition (ALD) are suitable for a range of applications. Some of these applications will be presented. First of all, ALD-grown high-k HfO2 is used as a gate oxide in the electronic devices. Moreover, ALD-grown oxides can be used in memory devices, in transparent transistors, or as elements of solar cells. Regarding photovoltaics (PV), ALD-grown thin films of Al2O3 are already used as anti-reflection layers. In addition, thin films of ZnO are tested as replacement of ITO in PV devices. New applications in organic photovoltaics, electronics and optoelectronics are also demonstrated Considering new applications, the same layers, as used in electronics, can also find applications in biology, medicine and in a food industry. This is because layers of high-k oxides show antibacterial activity, as discussed in this work.

Paper Details

Date Published: 24 February 2017
PDF: 9 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050L (24 February 2017); doi: 10.1117/12.2256017
Show Author Affiliations
Marek Godlewski, The Institute of Physics (Poland)
Cardinal S. Wyszyński Univ. (Poland)
Rafał Pietruszka, The Institute of Physics (Poland)
Jarosław Kaszewski, The Institute of Physics (Poland)
Bartłomiej S. Witkowski, The Institute of Physics (Poland)
Sylwia Gierałtowska, The Institute of Physics (Poland)
Łukasz Wachnicki, The Institute of Physics (Poland)
Michał M. Godlewski, Warsaw Univ. of Life Sciences SGGW (Poland)
Anna Slonska, Warsaw Univ. of Life Sciences SGGW (Poland)
Zdzisław Gajewski, Warsaw Univ. of Life Sciences SGGW (Poland)

Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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