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Proceedings Paper

Advances in hybrid silicon III-V quantum-dot laser (Conference Presentation)
Author(s): Yasuhiko Arakawa; Takahiro Nakamura; Bongyong Jang; Kastuaki Tanabe; Misturu Sugawara

Paper Abstract

High temperature stability and high feedback-noise tolerance of the quantum dot lasers are advantageous features for application to silicon photonics. A silicon optical interposer with the bandwidth-density of 15Tbps/cm2 at 125 °C was demonstrated using flip-chip bonding method. Moreover, we report the first demonstration of a hybrid silicon quantum dot (QD) laser, evanescently coupled to a silicon waveguide. InAs/GaAs QD laser structures with thin AlGaAs lower cladding layers were transferred, by means of direct wafer bonding, onto silicon waveguides defining cavities with adiabatic taper structures and distributed Bragg reflectors (DBRs). The laser operates at temperatures up to 115 °C under pulsed current conditions, with a characteristic temperature T0 of 303 K near room temperature. Furthermore, by reducing the width of GaAs/AlGaAs mesa down to 8 μm, continuous-wave operation is realized at 25 °C.

Paper Details

Date Published: 20 April 2017
PDF: 1 pages
Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230H (20 April 2017); doi: 10.1117/12.2255662
Show Author Affiliations
Yasuhiko Arakawa, The Univ. of Tokyo (Japan)
Takahiro Nakamura, Photonics Electronics Technology Research Association (Japan)
Bongyong Jang, The Univ. of Tokyo (Japan)
Kastuaki Tanabe, Kyoto Univ. (Japan)
Misturu Sugawara, QD Laser, Inc. (Japan)

Published in SPIE Proceedings Vol. 10123:
Novel In-Plane Semiconductor Lasers XVI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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