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Proceedings Paper

Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
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Paper Abstract

The paper reports the analysis of (In)AlGaN-based UV-B LEDs degradation under constant current stress, and investigates the impact of defects in changing the devices electro-optical performance. The study is based on combined electro-optical characterization, deep-level transient- (DLTS) and photocurrent spectroscopy. UV-B LEDs show a decrease of the optical power during stress, more pronounced at low measuring current levels, indicating that the degradation is related to an increase of Shockley-Read-Hall (SRH) recombination. DLTS measurements allowed the identification of three defects, in particular one ascribed to Mg-related acceptor traps presence. Photocurrent spectroscopy allows the localization of the defects close to the mid-gap.

Paper Details

Date Published: 16 February 2017
PDF: 9 pages
Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240T (16 February 2017); doi: 10.1117/12.2253843
Show Author Affiliations
Desiree Monti, Univ. degli Studi di Padova (Italy)
Matteo Meneghini, Univ. degli Studi di Padova (Italy)
Carlo De Santi, Univ. degli Studi di Padova (Italy)
Gaudenzio Meneghesso, Univ. degli Studi di Padova (Italy)
Enrico Zanoni, Univ. degli Studi di Padova (Italy)
Johannes Glaab, Ferdinand-Braun-Institut (Germany)
Jens Rass, Ferdinand-Braun-Institut (Germany)
Technische Univ. Berlin (Germany)
Sven Einfeldt, Ferdinand-Braun-Institut (Germany)
Frank Mehnke, Technische Univ. Berlin (Germany)
Tim Wernicke, Technische Univ. Berlin (Germany)
Michael Kneissl, Ferdinand-Braun-Institut (Germany)
Technische Univ. Berlin (Germany)

Published in SPIE Proceedings Vol. 10124:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI
Jong Kyu Kim; Michael R. Krames; Li-Wei Tu; Martin Strassburg, Editor(s)

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