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Proceedings Paper

Modelling of the modulation properties of arsenide and nitride VCSELs
Author(s): Michał Wasiak; Patrycja Śpiewak; Philip Moser; Marcin Gębski; Holger Schmeckebier; Robert P. Sarzała; James A. Lott
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Paper Abstract

In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser’s equivalent circuit.

Paper Details

Date Published: 25 February 2017
PDF: 7 pages
Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 101220A (25 February 2017); doi: 10.1117/12.2253646
Show Author Affiliations
Michał Wasiak, Lodz Univ. of Technology (Poland)
Patrycja Śpiewak, Lodz Univ. of Technology (Poland)
Philip Moser, Technische Univ. Berlin (Germany)
Marcin Gębski, Lodz Univ. of Technology (Poland)
Technische Univ. Berlin (Germany)
Holger Schmeckebier, Technische Univ. Berlin (Germany)
Robert P. Sarzała, Lodz Univ. of Technology (Poland)
James A. Lott, Technische Univ. Berlin (Germany)

Published in SPIE Proceedings Vol. 10122:
Vertical-Cavity Surface-Emitting Lasers XXI
Kent D. Choquette; Chun Lei, Editor(s)

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