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Proceedings Paper

Modeling of optical and electrical confinements in nitride VCSELs
Author(s): P. Śpiewak; M. Wasiak; A. K. Sokół; R. P. Sarzała
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Paper Abstract

In this paper, we present numerical simulations of different types of nitride VCSELs. We analyzed structures with different DBR mirrors and electrical confinements. We compare threshold parameters, including threshold current, threshold temperature and optical field distribution for structures with an ITO contact and structures with tunnel junctions. Lasers emitting blue/violet and green radiation are analyzed from the point of view of their thermal properties.

Paper Details

Date Published: 16 February 2017
PDF: 9 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041J (16 February 2017); doi: 10.1117/12.2253624
Show Author Affiliations
P. Śpiewak, Lodz Univ. of Technology (Poland)
M. Wasiak, Lodz Univ. of Technology (Poland)
A. K. Sokół, Lodz Univ. of Technology (Poland)
R. P. Sarzała, Lodz Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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