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Optical contactless measurement of semiconductor thermoelectric transport properties (Conference Presentation)

Paper Abstract

In view of the combinatorial approach to discovery of new thermoelectric materials, it is highly desirable to have fast measurement techniques, if possible with capabilities to access local fluctuations or gradients in material properties. Using the generalized Planck& #39;s law of radiation [1] for fitting the photoluminescence spectra is the most appropriate technique to access the quasi Fermi level splitting and the temperature of the carriers in a semiconductor. These two parameters enable to determine Seebeck coefficients for the material as a new photo-Seebeck effect [2]. The absolutely calibrated photoluminescence intensity profile[3] with the spatial coordinates combined with Callen coupled transport equations and with the kinetic expression of the transport parameters under the relaxation time approximation enable us to determine: the Seebeck coefficient, the electrical conductivity, the thermal electron and hole conductivity, the mobilities, the diffusion coefficients and the heat transferred from the carriers to the lattice. All these parameters can be obtained either for electrons or for holes[4], even simultaneously, for intrinsic semiconductor in ambipolar regime. The method has been applied to a multi-quantum well structure of InGaAsP. Since the luminescence comes from the wells, this method enables to access the transport properties in the plane of the wells inside the whole structure. Since photoluminescence does not require p-n junction nor high electrical conductivities for the measurement, this optical contactless measurement technique of thermoelectrinc transport parameters involving quasi-equilibrium carriers enables to access properties inside a given layer of the whole structure or in materials with very low conductivities. We will also show the perspectives offered for the research of new thermoelectric materials. [1] Würfel, J. Phys. C : Solid State Phys., 1982 [2] Gibelli et al., Phys. Rev. Appl., 5 (2) 2016 Tauc, Czech J Phys, 1955 [3] Delamarre, Appl. Phys. Lett., 2012 [4] Gibelli et al., Physica B, October 2016

Paper Details

Date Published: 19 April 2017
PDF: 2 pages
Proc. SPIE 10099, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI, 100990Y (19 April 2017); doi: 10.1117/12.2253605
Show Author Affiliations
Francois Gibelli, Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)
Laurent Lombez, Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)
Jean-François Guillemoles, Institut de Recherche et Développement sur l'Energie Photovoltaïque (France)

Published in SPIE Proceedings Vol. 10099:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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