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Proceedings Paper

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon
Author(s): P. Bhattacharya; A. Hazari; S. Jahangir
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Paper Abstract

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

Paper Details

Date Published: 16 February 2017
PDF: 8 pages
Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240H (16 February 2017);
Show Author Affiliations
P. Bhattacharya, Univ. of Michigan (United States)
A. Hazari, Univ. of Michigan (United States)
S. Jahangir, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 10124:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI
Jong Kyu Kim; Michael R. Krames; Li-Wei Tu; Martin Strassburg, Editor(s)

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