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Proceedings Paper

Ion implantation in silicon to facilitate testing of photonic circuits
Author(s): Graham T. Reed; Milan M. Milosevic; Xia Chen; Wei Cao; Callum G. Littlejohns; Hong Wang; Ali Z. Khokhar; David J. Thomson
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Paper Abstract

In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. We demonstrate the principle of a series of devices for wafers scale testing and have also implemented the ion implantation based refractive index change in integrated photonics devices for device trimming.

Paper Details

Date Published: 20 February 2017
PDF: 7 pages
Proc. SPIE 10107, Smart Photonic and Optoelectronic Integrated Circuits XIX, 1010709 (20 February 2017); doi: 10.1117/12.2252770
Show Author Affiliations
Graham T. Reed, Univ. of Southampton (United Kingdom)
Milan M. Milosevic, Univ. of Southampton (United Kingdom)
Xia Chen, Univ. of Southampton (United Kingdom)
Wei Cao, Univ. of Southampton (United Kingdom)
Callum G. Littlejohns, Univ. of Southampton (United Kingdom)
Nanyang Technological Univ. (Singapore)
Hong Wang, Nanyang Technological Univ. (Singapore)
Ali Z. Khokhar, Univ. of Southampton (United Kingdom)
David J. Thomson, Univ. of Southampton (United Kingdom)

Published in SPIE Proceedings Vol. 10107:
Smart Photonic and Optoelectronic Integrated Circuits XIX
Louay A. Eldada; El-Hang Lee; Sailing He, Editor(s)

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