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Proceedings Paper

Lasing dynamics of very long (13.5mm) tapered laser emitting at 975 nm
Author(s): M. Krakowski; P. Resneau; M. Garcia; E. Vinet; Y. Robert; M. Lecomte; O. Parillaud; B. Gerard; D. L. Boiko
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Paper Abstract

Mode-locked semiconductor laser technology is a promising technology candidate considered by European Space Agency (ESA) for optical metrology systems and other space applications in the context of high-precision optical metrology, in particular for High Accuracy Absolute Long Distance Measurement. For these applications, we have designed, realized and characterized a multi-section monolithic-cavity tapered laser diode with a record cavity length of 13.5mm. The laser operates at 975nm wavelength with average output power up to 600mW. It is based on a MOVPE grown laser structure with Aluminium free active region enabling high optical gain, low internal losses and low series resistance. It reaches passive mode-locking operation on fundamental cavity round trip frequency of 2.88GHz with chirped pulse width of 6.2ps and time bandwidth product of 8 for the average output power of 250mW. Alongside with passive mode-locking operation, we discuss other lasing regimes in these very long tapered lasers.

Paper Details

Date Published: 20 February 2017
PDF: 12 pages
Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230E (20 February 2017); doi: 10.1117/12.2252690
Show Author Affiliations
M. Krakowski, III-V Lab. (France)
P. Resneau, III-V Lab. (France)
M. Garcia, III-V Lab. (France)
E. Vinet, III-V Lab. (France)
Y. Robert, III-V Lab. (France)
M. Lecomte, III-V Lab. (France)
O. Parillaud, III-V Lab. (France)
B. Gerard, III-V Lab. (France)
D. L. Boiko, Ctr. Suisse d'Electronique et de Microtechnique SA (Switzerland)

Published in SPIE Proceedings Vol. 10123:
Novel In-Plane Semiconductor Lasers XVI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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