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Proceedings Paper

Optical study of strain-free GeSn nanowires
Author(s): Dzianis Saladukha; Jessica Doherty; Subhajit Biswas; Tomasz J. Ochalski; Justin D. Holmes
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Paper Abstract

Here we describe a uniform diameter, direct bandgap Ge1-xSnx alloy nanowires, with a Sn incorporation up to 9%, the fabricated through a conventional catalytic bottom-up growth paradigm employing innovative catalysts and precursors. Optical characterization by means of temperature dependent photoluminescence is used to identify transition point from indirect to direct badgap of GeSn nanowires.

Paper Details

Date Published: 20 February 2017
PDF: 6 pages
Proc. SPIE 10108, Silicon Photonics XII, 101081C (20 February 2017); doi: 10.1117/12.2252628
Show Author Affiliations
Dzianis Saladukha, Tyndall National Institute (Ireland)
Cork Institute of Technology (Ireland)
Jessica Doherty, Univ. College Cork (Ireland)
Subhajit Biswas, Univ. College Cork (Ireland)
Tomasz J. Ochalski, Tyndall National Institute (Ireland)
Cork Institute of Technology (Ireland)
Justin D. Holmes, Univ. College Cork (Ireland)
Trinity College Dublin (Ireland)

Published in SPIE Proceedings Vol. 10108:
Silicon Photonics XII
Graham T. Reed; Andrew P. Knights, Editor(s)

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