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Proceedings Paper

High performance amorphous Zn-Sn-O: impact of composition, microstructure, and thermal treatments in the optoelectronic properties
Author(s): Monica Morales-Masis; Esteban Rucavado; Quentin Jeangros; Federica Landuchi; Aïcha Hessler-Wyser; Christophe Ballif
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Paper Abstract

Zinc and tin oxides are both earth-abundant materials with demonstrated applicability as electrodes in several optoelectronic devices. The presence of grain boundaries in these polycrystalline films generally limits the electron mobility. By a combinatorial study of ZnO and SnO2, a transparent conducting amorphous zinc tin oxide (ZTO) electrode, free of grain boundaries, with a dense (void-free) microstructure has been developed. We show how tuning the stoichiometry (Zn4.5Sn30.2O65.3) and film’s microstructure during sputtering deposition, allows achieving electron mobilities up to 25 cm2/Vs and free carrier concentrations of ~ 7 x 1019 cm-3. The effects of post-deposition thermal treatments are furthermore studied. The ZTO films keep their dense amorphous microstructure upon annealing up to 500°C, as confirmed by cross-section TEM and XRD, while presenting a clear improvement in electron mobility up to 35 cm2/Vs when annealed in oxygen-rich atmospheres.

Paper Details

Date Published: 24 February 2017
PDF: 6 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050D (24 February 2017); doi: 10.1117/12.2252603
Show Author Affiliations
Monica Morales-Masis, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Esteban Rucavado, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Quentin Jeangros, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Univ. Basel (Switzerland)
Federica Landuchi, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Aïcha Hessler-Wyser, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Christophe Ballif, Ecole Polytechnique Fédérale de Lausanne (Switzerland)

Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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