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Proceedings Paper

Electrically-driven GHz range ultrafast graphene light emitter (Conference Presentation)
Author(s): Youngduck Kim; Yuanda Gao; Ren-Jye Shiue; Lei Wang; Ozgur Burak Aslan; Hyungsik Kim; Andrei M. Nemilentsau; Tony Low; Takashi Taniguchi; Kenji Watanabe; Myung-Ho Bae; Tony F. Heinz; Dirk R. Englund; James Hone

Paper Abstract

Ultrafast electrically driven light emitter is a critical component in the development of the high bandwidth free-space and on-chip optical communications. Traditional semiconductor based light sources for integration to photonic platform have therefore been heavily studied over the past decades. However, there are still challenges such as absence of monolithic on-chip light sources with high bandwidth density, large-scale integration, low-cost, small foot print, and complementary metal-oxide-semiconductor (CMOS) technology compatibility. Here, we demonstrate the first electrically driven ultrafast graphene light emitter that operate up to 10 GHz bandwidth and broadband range (400 ~ 1600 nm), which are possible due to the strong coupling of charge carriers in graphene and surface optical phonons in hBN allow the ultrafast energy and heat transfer. In addition, incorporation of atomically thin hexagonal boron nitride (hBN) encapsulation layers enable the stable and practical high performance even under the ambient condition. Therefore, electrically driven ultrafast graphene light emitters paves the way towards the realization of ultrahigh bandwidth density photonic integrated circuits and efficient optical communications networks.

Paper Details

Date Published: 19 April 2017
PDF: 1 pages
Proc. SPIE 10102, Ultrafast Phenomena and Nanophotonics XXI, 101021T (19 April 2017); doi: 10.1117/12.2252592
Show Author Affiliations
Youngduck Kim, Columbia Univ. (United States)
Yuanda Gao, Columbia Univ. (United States)
Ren-Jye Shiue, Massachusetts Institute of Technology (United States)
Lei Wang, Cornell Univ. (United States)
Ozgur Burak Aslan, Stanford Univ. (United States)
Hyungsik Kim, Columbia Univ. (United States)
Andrei M. Nemilentsau, Univ. of Minnesota (United States)
Tony Low, Univ. of Minnesota (United States)
Takashi Taniguchi, National Institute for Materials Science (Japan)
Kenji Watanabe, National Institute for Materials Science (Japan)
Myung-Ho Bae, Korea Research Institute of Standards and Science (Korea, Republic of)
Tony F. Heinz, Stanford Univ. (United States)
Dirk R. Englund, Massachusetts Institute of Technology (United States)
James Hone, Columbia Univ. (United States)

Published in SPIE Proceedings Vol. 10102:
Ultrafast Phenomena and Nanophotonics XXI
Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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