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Proceedings Paper

Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements
Author(s): Atsushi A. Yamaguchi; Takashi Nakano; Shigeta Sakai; Haruki Fukada; Yuya Kanitani; Shigetaka Tomiya
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Paper Abstract

Internal quantum efficiency (IQE) of radiative recombination for photo-excited carriers in compound semiconductor materials is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride semiconductors, however, usually have large defect-density, and the assumption is not necessarily valid. In this study, we developed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for an InGaN quantum-well sample. The results show that the conventional method cannot give accurate IQE values, and that our method is a promising way for accurate estimation of absolute IQE values, which could lead to the accurate estimation of radiative and nonradiative recombination lifetimes in carrier dynamics studies.

Paper Details

Date Published: 16 February 2017
PDF: 6 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010409 (16 February 2017); doi: 10.1117/12.2252468
Show Author Affiliations
Atsushi A. Yamaguchi, Kanazawa Institute of Technology (Japan)
Takashi Nakano, Kanazawa Institute of Technology (Japan)
Shigeta Sakai, Kanazawa Institute of Technology (Japan)
Haruki Fukada, Kanazawa Institute of Technology (Japan)
Yuya Kanitani, Sony Corp. (Japan)
Shigetaka Tomiya, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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