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Proceedings Paper

Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications
Author(s): Ludovic Dupré; Marjorie Marra; Valentin Verney; Bernard Aventurier; Franck Henry; François Olivier; Sauveur Tirano; Anis Daami; François Templier
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Paper Abstract

We report the fabrication process and characterization of high resolution 873 x 500 pixels emissive arrays based on blue or green GaN/InGaN light emitting diodes (LEDs) at a reduced pixel pitch of 10 μm. A self-aligned process along with a combination of damascene metallization steps is presented as the key to create a common cathode which is expected to provide good thermal dissipation and prevent voltage drops between center and side of the micro LED matrix. We will discuss the challenges of a self-aligned technology related to the choice of a good P contact metal and will present our solutions for the realization of the metallic interconnections between the GaN contacts and the higher levels of metallization at such a small pixel pitch. Enhanced control of each technological step allows scalability of the process up to 4 inch LED wafers and production of high quality LED arrays. The very high brightness (up to 107 cd.m-2) and good external quantum efficiency (EQE) of the resulting device make these kind of micro displays suitable for augmented reality or head up display applications.

Paper Details

Date Published: 16 February 2017
PDF: 8 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010422 (16 February 2017); doi: 10.1117/12.2252196
Show Author Affiliations
Ludovic Dupré, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Marjorie Marra, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Valentin Verney, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Bernard Aventurier, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Franck Henry, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
François Olivier, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Sauveur Tirano, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Anis Daami, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
François Templier, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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