Share Email Print

Proceedings Paper

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system
Author(s): A. K. Hansen; M. Christensen; D. Noordegraaf; P. Heist; E. Papastathopoulos; V. Loyo-Maldonado; O. B. Jensen; M. L. Stock; P. M. W. Skovgaard
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm.

We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

Paper Details

Date Published: 20 February 2017
PDF: 6 pages
Proc. SPIE 10088, Nonlinear Frequency Generation and Conversion: Materials and Devices XVI, 1008802 (20 February 2017); doi: 10.1117/12.2251964
Show Author Affiliations
A. K. Hansen, Norlase ApS (Denmark)
Technical Univ. of Denmark (Denmark)
M. Christensen, Norlase ApS (Denmark)
Technical Univ. of Denmark (Denmark)
D. Noordegraaf, Norlase ApS (Denmark)
P. Heist, JENOPTIK Laser GmbH (Germany)
E. Papastathopoulos, JENOPTIK Laser GmbH (Germany)
V. Loyo-Maldonado, JENOPTIK Laser GmbH (Germany)
O. B. Jensen, Technical Univ. of Denmark (Denmark)
M. L. Stock, Norlase ApS (Denmark)
P. M. W. Skovgaard, Norlase ApS (Denmark)

Published in SPIE Proceedings Vol. 10088:
Nonlinear Frequency Generation and Conversion: Materials and Devices XVI
Konstantin L. Vodopyanov; Kenneth L. Schepler, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?