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Proceedings Paper

1030nm DBR tapered diode laser with up to 16 W of optical output power
Author(s): A. Müller; C. Zink; J. Fricke; F. Bugge; O. Brox; G. Erbert; B. Sumpf
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Paper Abstract

A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with optimized vertical layer structure and lateral design is presented. At a heatsink temperature of 15°C the developed laser provides up to 16 W of optical output power. The maximum electro-optical efficiency is 57%. Intrinsic wavelength stabilization is obtained by a 7th order DBR grating and results in a narrowband emission over the whole power range. Ion implantation next to the ridge-waveguide is applied in order to suppress propagation of unwanted lateral side modes. The highest diffraction-limited central lobe power measured for this device is 9.1 W. With these properties the presented high brightness laser is suitable for applications such as nonlinear frequency conversion.

Paper Details

Date Published: 20 February 2017
PDF: 7 pages
Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101231B (20 February 2017); doi: 10.1117/12.2251845
Show Author Affiliations
A. Müller, Ferdinand-Braun-Institut (Germany)
C. Zink, Ferdinand-Braun-Institut (Germany)
J. Fricke, Ferdinand-Braun-Institut (Germany)
F. Bugge, Ferdinand-Braun-Institut (Germany)
O. Brox, Ferdinand-Braun-Institut (Germany)
G. Erbert, Ferdinand-Braun-Institut (Germany)
B. Sumpf, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 10123:
Novel In-Plane Semiconductor Lasers XVI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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