We present magnetooptical and transport properties of metamorphic periodic structures containing InAsSb layers with controllable modulated Sb composition [1]. The modulation period is determined by the thicknesses of the strain compensated InAsSbx/InAsSby pairs grown on a virtual AlGaInSb substrate with a lattice constant of 6.25 A. We demonstrate that the bandgap energy of ordered InAsSb0.3/InAsSb0.75 alloy varies from 100mev to a few meV as a result of the well-regulated variation of the modulation period from ∼3 to ∼7.5 nm. The material effective masses and the specific character of the energy spectra will be discussed. 1. G. Belenky, Y. Lin, L. Shterengas, D. Donetsky, G. Kipshidze and S. Suchalkin, Electron. Lett. 51 (19), 1521, (2015)

Date Published: 28 April 2017
PDF: 1 pages
Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101112U (28 April 2017); doi: 10.1117/12.2251362

Published in SPIE Proceedings Vol. 10111:
Quantum Sensing and Nano Electronics and Photonics XIV
Manijeh Razeghi, Editor(s)