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Proceedings Paper

1180 nm GaInNAs quantum well based high power DBR laser diodes
Author(s): Jukka Viheriälä; Antti T. Aho; Heikki Virtanen; Mervi Koskinen; Michael Dumitrescu; Mircea Guina
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Paper Abstract

We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.

Paper Details

Date Published: 24 February 2017
PDF: 6 pages
Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860K (24 February 2017); doi: 10.1117/12.2251317
Show Author Affiliations
Jukka Viheriälä, Tampere Univ. of Technology (Finland)
Antti T. Aho, Tampere Univ. of Technology (Finland)
Heikki Virtanen, Tampere Univ. of Technology (Finland)
Mervi Koskinen, Tampere Univ. of Technology (Finland)
Michael Dumitrescu, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 10086:
High-Power Diode Laser Technology XV
Mark S. Zediker, Editor(s)

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