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Proceedings Paper

Modeling of frequency response in strain balanced SiGeSn/GeSn quantum well infrared photodetector
Author(s): Prakash Pareek; Ravi Ranjan; Mukul K. Das
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Paper Abstract

In this work carrier transport mechanism in strain balanced SiGeSn/GeSn QWIP is studied to obtain the frequency response. Initially, a QWIP model is proposed in which a 76Å thick Ge0.83Sn0.17 layer is sandwiched between two tensile strained Si0.09Ge0.8 Sn0.11 layers to form a type-I single strain balanced quantum-well infrared photodetector (SQWIP). The rate equation in quantum well and continuity equation over the well are solved simultaneously to obtain frequency response. The 3dB bandwidth obtained from frequency response is evaluated as 47 GHz at zero bias which increased with the applied bias. Also, the effect of bias dependent escape rates of carrier from the quantum well on the 3dB bandwidth is studied.

Paper Details

Date Published: 22 February 2017
PDF: 7 pages
Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100981P (22 February 2017); doi: 10.1117/12.2251300
Show Author Affiliations
Prakash Pareek, Indian Institute of Technology (India)
Ravi Ranjan, Indian Institute of Technology (India)
Mukul K. Das, Indian Institute of Technology (India)

Published in SPIE Proceedings Vol. 10098:
Physics and Simulation of Optoelectronic Devices XXV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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