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Proceedings Paper

Low voltage electrowetting lenticular lens by using multilayer dielectric structure
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Paper Abstract

Lenticular type multi-view display is one of the most popular ways for implementing three dimensional display. This method has a simple structure and exhibits a high luminance. However, fabricating the lenticular lens is difficult because it requires optically complex calculations. 2D-3D conversion is also impossible due to the fixed shape of the lenticular lens. Electrowetting based liquid lenticular lens has a simple fabrication process compared to the solid lenticular lens and the focal length of the liquid lenticular lens can be changed by applying the voltage. 3D and 2D images can be observed with a convex and a flat lens state respectively. Despite these advantages, the electrowetting based liquid lenticular lens demands high driving voltage and low breakdown voltage with a single dielectric layer structure. A certain degree of thickness of the dielectric layer is essential for a uniform operation and a low degradation over time. This paper presents multilayer dielectric structure which results in low driving voltage and the enhanced dielectric breakdown. Aluminum oxide (Al2O3), silicon oxide (SiO2) and parylene C were selected as the multilayer insulators. The total thickness of the dielectric layer of all samples was the same. This method using the multilayer dielectric structure can achieve the lower operating voltage than when using the single dielectric layer. We compared the liquid lenticular lens with three kinds of the multilayer dielectric structure to one with the parylene C single dielectric layer in regard to operational characteristics such as the driving voltage and the dielectric breakdown.

Paper Details

Date Published: 20 February 2017
PDF: 6 pages
Proc. SPIE 10116, MOEMS and Miniaturized Systems XVI, 1011609 (20 February 2017); doi: 10.1117/12.2250719
Show Author Affiliations
Junsik Lee, KAIST (Korea, Republic of)
Junoh Kim, KAIST (Korea, Republic of)
Cheoljoong Kim, KAIST (Korea, Republic of)
Dooseub Shin, KAIST (Korea, Republic of)
Gyohyun Koo, KAIST (Korea, Republic of)
Jee Hoon Sim, KAIST (Korea, Republic of)
Yong Hyub Won, KAIST (Korea, Republic of)

Published in SPIE Proceedings Vol. 10116:
MOEMS and Miniaturized Systems XVI
Wibool Piyawattanametha; Yong-Hwa Park, Editor(s)

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