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Proceedings Paper

1030-nm diode-laser-based light source delivering pulses with nanojoule energies and picosecond duration adjustable by mode locking or pulse gating operation
Author(s): A. Klehr; A. Liero; H. Wenzel; F. Bugge; O. Brox; J. Fricke; P. Ressel; A. Knigge; W. Heinrich; G. Tränkle
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Paper Abstract

A new compact 1030 nm picosecond light source which can be switched between pulse gating and mode locking operation is presented. It consists of a multi-section distributed Bragg reflector (DBR) laser, an ultrafast multisection optical gate and a flared power amplifier (PA), mounted together with high frequency electronics and optical elements on a 5×4 cm micro bench. The master oscillator (MO) is a 10 mm long ridge wave-guide (RW) laser consisting of 200 μm long saturable absorber, 1500 μm long gain, 8000 μm long cavity, 200 μm long DBR and 100 μm long monitor sections. The 2 mm long optical gate consisting of several RW sections is monolithically integrated with the 4 mm long gain-guided tapered amplifier on a single chip. The light source can be switched between pulse gating and passive mode locking operation. For pulse gating all sections of the MO (except of the DBR and monitor sections) are forward biased and driven by a constant current. By injecting electrical pulses into one section of the optical gate the CW beam emitted by the MO is converted into a train of optical pulses with adjustable widths between 250 ps and 1000 ps. Peak powers of 20 W and spectral linewidths in the MHz range are achieved. Shorter pulses with widths between 4 ps and 15 ps and peak powers up to 50 W but larger spectral widths of about 300 pm are generated by mode locking where the saturable absorber section of the MO is reversed biased. The repetition rate of 4.2 GHz of the pulse train emitted by the MO can be reduced to values between 1 kHz and 100 MHz by utilizing the optical gate as pulse picker. The pulse-to-pulse distance can be controlled by an external trigger source.

Paper Details

Date Published: 20 February 2017
PDF: 11 pages
Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230D (20 February 2017); doi: 10.1117/12.2250093
Show Author Affiliations
A. Klehr, Ferdinand-Braun-Institut (Germany)
A. Liero, Ferdinand-Braun-Institut (Germany)
H. Wenzel, Ferdinand-Braun-Institut (Germany)
F. Bugge, Ferdinand-Braun-Institut (Germany)
O. Brox, Ferdinand-Braun-Institut (Germany)
J. Fricke, Ferdinand-Braun-Institut (Germany)
P. Ressel, Ferdinand-Braun-Institut (Germany)
A. Knigge, Ferdinand-Braun-Institut (Germany)
W. Heinrich, Ferdinand-Braun-Institut (Germany)
G. Tränkle, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 10123:
Novel In-Plane Semiconductor Lasers XVI
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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