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Proceedings Paper

Hot-wall-beam epitaxy and atomic-layer epitaxy of II-VI compounds for optoelectronics
Author(s): Helmut Sitter
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Paper Abstract

The characteristics of different crystal growth techniques which are successfully used for the fabrication of epitaxial layers of CdTe, ZnTe, CdSe and ZnSe are compared. These techniques can be divided into two groups: first, the hot-wall-epitaxy and the hot-wall-beam-epitaxy working close to thermodynamic equilibrium, and second the atomic-layer epitaxy and the self-limiting monolayer epitaxy, which take some advantage to operate far away from thermodynamic equilibrium. With both groups of techniques epilayers and layered structures of high quality could be grown.

Paper Details

Date Published: 16 October 1995
PDF: 8 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224964
Show Author Affiliations
Helmut Sitter, Univ. Linz (Austria)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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