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Proceedings Paper

Radiation-induced defects in gadolinium gallium garnet (GGG) single crystals
Author(s): Andrej O. Matkovskii; D. Y. Sugack; Sergii B. Ubizskii; I. V. Kityk; Marian Kuzma
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Paper Abstract

The experimental investigation results of different kinds of ionizing radiation's (gamma- quanta, electrons, protons, neutrons, neon ions) influence on the optical, electrophysical, structural properties of gadolinium gallium garnet (GGG) crystals are presented. Some crystal parameters have been obtained using the quantum-chemical calculations. With regard to this result the radiation damage concentrations have been calculated. For most likely defect configurations the defect level energies and optical transition probabilities have been determined by means of Green function method. The mechanisms of radiation-induced transformations and color center models are discussed.

Paper Details

Date Published: 16 October 1995
PDF: 10 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224960
Show Author Affiliations
Andrej O. Matkovskii, Institute of Materials (Ukraine)
Institute of Physics (Poland)
D. Y. Sugack, Institute of Materials (Ukraine)
Sergii B. Ubizskii, Institute of Materials (Ukraine)
I. V. Kityk, Institute of Materials (Ukraine)
Marian Kuzma, Institute of Physics (Poland)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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