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Proceedings Paper

New methods for determining trap parameters in semiconductors from TSC and TL spectra
Author(s): Arkadiusz Mandowski; Jozef Swiatek
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Paper Abstract

Kinetics of thermally stimulated conductivity (TSC) and thermoluminescence (TL) are considered using the classical trap model. Taking advantage of some recently derived analytical formulae we present new methods for determining trap parameters, especially the density of deep traps and activation energy, from thermally stimulated spectra. Approximate analytical solutions for TSC and TL in the form of a generalized 'initial rise' method are derived. It is shown that performing thermally stimulated experiments for different heating rates it is possible to determine some basic trap parameters by solving a simple non-linear equation. Relative error of the approximations is estimated numerically for various trap parameters. In most cases the error is less than 0.1% in the whole range of the spectrum.

Paper Details

Date Published: 16 October 1995
PDF: 6 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224957
Show Author Affiliations
Arkadiusz Mandowski, Pedagogical Univ. of Czestochowa (Poland)
Jozef Swiatek, Pedagogical Univ. of Czestochowa (Poland)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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