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Proceedings Paper

Computer modeling of carrier transport in binary lead salt photodiodes
Author(s): Antoni Rogalski; Robert Ciupa; Hans Zogg
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Paper Abstract

A numerical technique has been used to solve the carrier transport equations for n+- p PbS, PbSe, and PbTe photodiode configurations. The model computes the spatial distribution of the electric field, electron and hole concentrations, and the generation- recombination mechanisms. Also the effect of doping profiles on the photodiode parameters (RoA product, quantum efficiency) is analyzed. Results of calculations indicate the potential possibilities of constructing higher quality photodiodes. The RoA product of experimentally measured PbS, PbSe, and PbTe photodiodes at low temperatures is controlled by Shockley-Read-Hall generation-recombination mechanism. In the range of higher temperatures, the influence of auger generation-recombination mechanism is also appreciable.

Paper Details

Date Published: 16 October 1995
PDF: 10 pages
Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224949
Show Author Affiliations
Antoni Rogalski, Institute of Technical Physics (Poland)
Robert Ciupa, Institute of Technical Physics (Poland)
Hans Zogg, Swiss Federal Institute of Technology (Switzerland)

Published in SPIE Proceedings Vol. 2373:
Solid State Crystals: Materials Science and Applications
Jozef Zmija, Editor(s)

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