The interface which should correspond to Ohmic contact between the TiN bottom electrode and the TiN adhesive layer is investigated. However, from the measured V-I curve, a non-linear relationship is observed. The previous research and the replotted V-I curve using double-logarithmic scale demonstrate that an oxide layer at the interface is the major reason for the non-linear relationship and that the conduction mechanism here follows the Space-Charge-Limited- Current mechanism. To eliminate the interface effect, a pulse current with a compliance is introduced. A phenomenon is observed that negative resistance occurs because of the capture of filament in the oxide layer. As the width of pulse current increases, the interface effect is eliminated due to the formation of a permanent conducting filament. And , the VI curve shows a linear relationship, representing that the interface corresponds to Ohmic contact and the interface effect has been eliminated efficiently.

Date Published: 12 October 2016
PDF: 5 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981813 (12 October 2016); doi: 10.1117/12.2249001

Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)