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Proceedings Paper

Wafer hot spot identification through advanced photomask characterization techniques
Author(s): Yohan Choi; Michael Green; Jeff McMurran; Young Ham; Howard Lin; Andy Lan; Richer Yang; Mike Lung
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Paper Abstract

As device manufacturers progress through advanced technology nodes, limitations in standard 1-dimensional (1D) mask Critical Dimension (CD) metrics are becoming apparent. Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer’s process margin is shrinking at advanced nodes to a point that the classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on subresolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. These items are not quantifiable with the 1D metrology techniques of today. Likewise, the mask maker needs advanced characterization methods in order to optimize the mask process to meet the wafer lithographer’s needs. These advanced characterization metrics are what is needed to harmonize mask and wafer processes for enhanced wafer hot spot analysis. In this paper, we study advanced mask pattern characterization techniques and their correlation with modeled wafer performance.

Paper Details

Date Published: 5 October 2016
PDF: 9 pages
Proc. SPIE 9985, Photomask Technology 2016, 998521 (5 October 2016); doi: 10.1117/12.2248678
Show Author Affiliations
Yohan Choi, Photronics, Inc. (United States)
Michael Green, Photronics, Inc. (United States)
Jeff McMurran, Photronics, Inc. (United States)
Young Ham, Photronics, Inc. (United States)
Howard Lin, Inotera Memories Inc. (Taiwan)
Andy Lan, Inotera Memories Inc. (Taiwan)
Richer Yang, Inotera Memories Inc. (Taiwan)
Mike Lung, Inotera Memories Inc. (Taiwan)

Published in SPIE Proceedings Vol. 9985:
Photomask Technology 2016
Bryan S. Kasprowicz; Peter D. Buck, Editor(s)

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