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Proceedings Paper

Growth and characterization of high strain InGaAs/GaAs quantum well by molecular beam epitaxy
Author(s): Rui Shan; Yu Liu; Jie Guo; Guowei Wang; Yingqiang Xu
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Paper Abstract

High indium composition InxGa1-xAs/GaAs quantum wells (x˃0.4) in which the well width reached to 7 nm without relaxing were grown on (100) GaAs substrates by MBE. The good crystal quality and optical properties of the high strained InGaAs/GaAs QW were obtained by controlling quasi-2D growth model and optimizing the growth condition including the growth temperature, growth rate, and V/III BEP ratio. Photoluminescence (PL) showed that the cutoff wavelength was about 1.3μm at room temperature with narrow full width at half maximum below 30meV. Dilute nitrogen and high In composition InGaAsN/GaAs QW extended wavelength infrared photodetectors at 1.3 and 1.55 μm were also realized.

Paper Details

Date Published: 1 November 2016
PDF: 7 pages
Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573F (1 November 2016); doi: 10.1117/12.2247398
Show Author Affiliations
Rui Shan, Yunnan Normal Univ. (China)
Yu Liu, Yunnan Normal Univ. (China)
Jie Guo, Yunnan Normal Univ. (China)
Guowei Wang, Institute of Semiconductors (China)
Yingqiang Xu, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 10157:
Infrared Technology and Applications, and Robot Sensing and Advanced Control

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