In this work a on-wafer high temperature characterization system for wide bandgap semiconductor devices and circuits has been designed, implemented and tested. The proposed system can perform the wafer temperature adjustment in a large domain, from the room temperature up to 300⁰C with a resolution better than ±0.5⁰C. In order to obtain both low-noise measurements and low EMI, the heating element of the wafer chuck is supplied in two ways: one is from a DC linear power supply connected to the mains electricity, another one is from a second DC unit powered by batteries. An original temperature control algorithm, different from classical PID, is used to modify the power applied to the chuck.

Date Published: 14 December 2016
PDF: 8 pages
Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 1001006 (14 December 2016); doi: 10.1117/12.2247062

Published in SPIE Proceedings Vol. 10010:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII
Marian Vladescu; Cornel T. Panait; Razvan Tamas; George Caruntu; Ionica Cristea, Editor(s)