Proceedings Paper
Simulation of InGaAs/InAlAs avalanche photodetectors| Format | Member Price | Non-Member Price |
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Paper Abstract
In this paper, we report 2D simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication
avalanche photodetectors (SAGCM APDs), study the effect of multiplication layer parameters on the operating voltage
ranges of APD. We found that with the change of the thickness and doping concentration of multiplication layer, the
change of the punchthrough voltage, and the breakdown voltage can be obviously observed.
Paper Details
Date Published: 1 November 2016
PDF: 6 pages
Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101572A (1 November 2016); doi: 10.1117/12.2246821
Published in SPIE Proceedings Vol. 10157:
Infrared Technology and Applications, and Robot Sensing and Advanced Control
PDF: 6 pages
Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101572A (1 November 2016); doi: 10.1117/12.2246821
Show Author Affiliations
Zhengyu Zhang, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)
Min Zhu, Soochow Univ. (China)
Published in SPIE Proceedings Vol. 10157:
Infrared Technology and Applications, and Robot Sensing and Advanced Control
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