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Proceedings Paper

Comparative study of deep traps in extended wavelength InxGa1-xAs photodetectors
Author(s): Tie Zhang; Ying Zhou; Congrui Xue; Hengjing Tang; Xue Li; Haimei Gong; Xiaoli Ji
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Paper Abstract

In this paper, deep-level transient spectroscopy (DLTS) techniques are used to study the defects presented in InxGa1-xAs/InP PIN photodetectors. For the lattice matched InxGa1-xAs /InP devices with x=0.53, the only electron trap located near the middle of the band gap is observed. A study of the influence of the bias voltage variation on DLTS signal for electron trap illustrates that this trap are uniformly distributed in the volume of InxGa1-xAs material. On the other hand, for the lattice mismatch InxGa1-xAs /InP devices, the additional hole defect located in the lower side of the middle gap is observed and this concentration increased with the depletion width. It is considered that these traps are related to the lattice mismatch and could be contributed to the large dark currents in the extended wavelength InxGa1-xAs photodetectors.

Paper Details

Date Published: 25 October 2016
PDF: 4 pages
Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101571P (25 October 2016); doi: 10.1117/12.2246625
Show Author Affiliations
Tie Zhang, Nanjing Univ. (China)
Ying Zhou, Nanjing Univ. (China)
Congrui Xue, Nanjing Univ. (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)
Xiaoli Ji, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 10157:
Infrared Technology and Applications, and Robot Sensing and Advanced Control

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